may 2009 1 mitsubishi high voltage diode module RM1200DG-66S high power switching use insulated type i f ................................................................ 1200a v rrm ...................................................... 3300v high insulated type 2-element in a pack alsic baseplate application tr action drives, high reliability converters / inverters, dc choppers RM1200DG-66S outline drawing & circuit diagram dimensions in mm high voltage diode module high voltage diode module (k) (k) 2 4 (a) (a) 1 3 circuit diagram 42 3 1 6- 7 mounting holes screwing depth min. 16.5 4-m8 nuts +1.0 0 48 130 0.5 57 0.25 57 0.25 17 0.1 44 0.3 22 0.3 124 0.25 140 0.5 16.5 0.3 5 0.15 40.4 0.5 61.2 0.5 34.4 0.5 >pet+pbt<
may 2009 2 mitsubishi high voltage diode module RM1200DG-66S high power switching use insulated type maximum ratings symbol item conditions unit ratings high voltage diode module high voltage diode module typ max electrical characteristics conditions limits note 1. it doesn't include the voltage drop by internal lead resistance. 2. e rec is the integral of 0.1v r x 0.1irr x dt. v rm = v rrm i f = 1200 a t j = 25 c t j = 125 c t j = 25 c t j = 125 c repetitive reverse current forward voltage (note 1) reverse recovery time reverse recovery current reverse recovery charge reverse recovery energy (note 2) 5 30 ma v s a c j/p 3 2.80 2.70 1.0 1600 800 0.9 i rrm v fm t rr i rr q rr e rec v r = 1650 v, i f = 1200 a di/dt = ?000 a/ s l s =100nh, t j = 125 c symbol item min unit v rrm v rsm v r(dc) i f i fsm i 2 t v iso v e t j t op t stg repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage dc forward current surge forward current current-squared, time integration isolation voltage partial discharge extinction voltage junction temperature operating temperature storage temperature t j = 25 c t j = 25 c t j = 25 c t c = 25 c t j = 25 c start, t w = 8.3 ms half sign wave t j = 25 c start, t w = 8.3 ms half sign wave charged part to the baseplate rms sinusoidal, 60hz 1min. rms sinusoidal, 60hz, q pd 10 pc 3300 3300 2200 1200 9600 384 10200 5100 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 v v v a a ka 2 s v v c c c
may 2009 3 mitsubishi high voltage diode module RM1200DG-66S high power switching use insulated type high voltage diode module high voltage diode module min typ max thermal characteristics symbol item conditions limits unit min typ max mechanical characteristics symbol item conditions limits unit r th(j-c) r th(c-f) junction to case (per 1/2 module) case to fin, grease = 1w/m? d (c-f) =100 m, (per 1/2 module) k/kw k/kw thermal resistance contact thermal resistance 18.0 16.0 m t m s m cti d a d s l p ce r cc?ee m8: main terminals screw m6: mounting screw t c = 25 c n? n? kg mm mm nh m ? mounting torque mass comparative tracking index clearance creepage distance internal inductance internal lead resistance 15.0 6.0 1.0 44 0.27 7.0 3.0 600 26 56 performance curves reverse recovery energy characteristics (typical) forward characteristics (typical) forward current i f (a) t j = 25 c t j = 125 c 0 2500 2000 1500 1000 500 forward voltage v f (v) 0123456 0 1.5 1.0 0.5 0 500 1000 2000 1500 2500 forward current i f (a) reverse recovery energy e rec (j/p) v r = 1650v, di/dt = 4000a/ s t j = 125 c, l s = 100nh
may 2009 4 forward current i f (a) reverse recovery characteristics (typical) normalized transient thermal impedance transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 time (s) 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 reverse recovery time t rr ( s) reverse recovery current i rr (a) reverse recovery current i rr (a) 10 3 10 2 23 57 10 4 23 5 447 reverse recovery safe operating area (rrsoa) reverse voltage v r (v) 0 1000 2000 3000 4000 0 500 1500 1000 2000 3000 2500 r th(j?) = 18k/kw v r 2200v, di/dt 5400a/ s t j = 125 c v r = 1650v, di/dt = 4000a/ s t j = 125 c, l s = 100nh i rr t rr mitsubishi high voltage diode module RM1200DG-66S high power switching use insulated type high voltage diode module high voltage diode module zr th( j ? ) ( t ) = n i=1 i 1?xp t i t ? ? ? ? r i [k/kw] i [sec] 1 0.0059 0.0002 2 0.0978 0.0074 3 0.6571 0.0732 4 0.2392 0.4488
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